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Issue DateTitleAuthor(s)
1998Characteristics of InGaAs quantum dot infrared photodetectorsXu, S.J. ; Chua, S.J. ; Mei, T.; Wang, X.C.; Zhang, X.H.; Karunasiri, G. ; Fan, W.J.; Wang, C.H.; Jiang, J.; Wang, S.; Xie, X.G.
1-Aug-1998Characterization of titanium silicide by Raman spectroscopy for submicron IC processingLim, E.H.; Karunasiri, G. ; Chua, S.J. ; Shen, Z.X. ; Wong, H.; Pey, K.L.; Lee, K.H.; Chan, L.
23-Nov-2000Circuit for microbolometer bias-heating cancellationXu, Y.P. ; Qian, X.B. ; Karunasiri, G. 
Apr-2000Circuit model for quantum-well infrared photodetectors and its comparison with experimentsChee, Y.H.; Karunasiri, G. 
4-Jan-2000Cmos gate architecture for integration of salicide process in sub 0.1. .muM devicesHO, CHAW SING; KARUNASIRI, R. P. G. ; CHUA, SOO JIN ; PEY, KIN LEONG ; LEE, KONG HEAN
1997Dependence of the composition of InAs1-xSbx on the mole fraction of In in the melt using LPEChatrath, V.; Chua, S.J. ; Karunasiri, G. ; Mao, Y.
1998Design and analysis of a double barrier quantum well infrared photodetectorTan, L.S. ; Cheah, C.W.; Karunasiri, G. ; Raman, A.
1998Determination of thermal parameters of microbolometers using a single electrical measurementGu, X.; Karunasiri, G. ; Chen, G. ; Sridhar, U.; Xu, B.
Dec-1995Doping dependence of intersubband transitions in Si1-xGex Si multiple quantum wellsKarunasiri, G. ; Jin Chua, S. ; Suk Park, J.; Wang, K.L.
8-Apr-1999DUAL BAND INFRARED DETECTOR USING STEP MULTIQUANTUM WELLS WITH SUPERLATTICE BARRIERSKARUNASIRI, GAMANI ; CHUA, SOO-JIN 
1997Effect of argon or nitrogen pre-amorphized implant on SALICIDE formation for deep sub-micron CMOS technologyHo, C.S.; Pey, K.L.; Wong, H.; Karunasirf, R.P.G. ; Chua, S.J. ; Lee, K.H.; Tang, Y.; Wong, S.M.; Chan, L.H.
2003Effect of operating temperature on electrical and thermal properties of microbolometer infrared sensorsKarunasiri, G. ; Ramakrishna, M.V.S.; Neuzil, P.
30-Nov-1996Effect of presence and type of particulate reinforcement on the electrical conductivity of non-heat treatable aluminumGupta, M. ; Karunasiri, G. ; Lai, M.O. 
1998Effects of changing Al mole fraction on the performance of an InGaAlAs/InP DBRTDLim, C.H.; Chua, S.J. ; Karunasiri, G. 
2001Effects of hydrostatic pressure on Raman scattering in Ge quantum dotsTeo, K.L. ; Qin, L.; Noordin, I.M.; Karunasiri, G. ; Shen, Z.X. ; Schmidt, O.G.; Eberl, K.; Queisser, H.J.
1999Electro-thermal modelling of infrared microemitters using PSPICERavi Kiran, S.; Karunasiri, G. 
1998Extraction of thermal parameters of microbolometer infrared detectors using electrical measurementKarunasiri, G. ; Gu, X.; Chen, G. ; Sridhar, U. 
2-Nov-1995Heavily silicon doped InGaAlAs InP epilayers grown by molecular beam epitaxyRamam, A. ; Chua, S.J. ; Karunasiri, G. ; Vaya, P.R. 
1-Feb-2000Highly sensitive infrared temperature sensor using self-heating compensated microbolometersRamakrishna, M.V.S.; Karunasiri, G. ; Neuzil, P.; Sridhar, U.; Zeng, W.J.
1-Feb-2000Highly sensitive infrared temperature sensor using self-heating compensated microbolometersRamakrishna, M.V.S.; Karunasiri, G. ; Neuzil, P.; Sridhar, U.; Zeng, W.J.