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BRAM HOEX
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Showing results 48 to 59 of 59
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Issue Date
Title
Author(s)
Sep-2012
Polarisation analysis of luminescence for the characterisation of defects in silicon wafer solar cells
Peloso, M.P.
;
Lew, J.S.
;
Chaturvedi, P.
;
Hoex, B.
;
Aberle, A.G.
25-Apr-2011
Polarization analysis of luminescence for the characterization of silicon wafer solar cells
Peloso, M.P.
;
Hoex, B.
;
Aberle, A.G.
2013
Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks
Duttagupta, S.
;
Ma, F.-J.
;
Lin, S.F.
;
Mueller, T.
;
Aberle, A.G.
;
Hoex, B.
2012
Rear-side contact opening by laser ablation for industrial screen-printed aluminium local back surface field silicon wafer solar cells
Du, Z.
;
Palina, N.
;
Chen, J.
;
Hong, M.
;
Hoex, B.
1-Nov-2013
Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy
Hoex, Bram
;
Bosman, Michel
;
Nandakumar, Naomi
;
Kessels, WMM
2009
Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon
Dingemans, G.
;
Engelhart, P.
;
Seguin, R.
;
Einsele, F.
;
Hoex, B.
;
Van De Sanden, M.C.M.
;
Kessels, W.M.M.
2012
State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cells
Duttagupta, S.
;
Lin, F.
;
Shetty, K.D.
;
Wilson, M.
;
Ma, F.-J.
;
Lin, J.
;
Aberle, A.G.
;
Hoex, B.
Jan-2012
Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3
Hoex, B.
;
van de Sanden, M.C.M.
;
Schmidt, J.
;
Brendel, R.
;
Kessels, W.M.M.
Jan-2012
Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3
Hoex, B.
;
van de Sanden, M.C.M.
;
Schmidt, J.
;
Brendel, R.
;
Kessels, W.M.M.
Aug-2010
The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter
Bock, R.
;
Schmidt, J.
;
Mau, S.
;
Hoex, B.
;
Brendel, R.
14-Jan-2013
The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3
Liao, B.
;
Stangl, R.
;
Mueller, T.
;
Lin, F.
;
Bhatia, C.S.
;
Hoex, B.
2013
Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid
Liu, L.
;
Lin, F.
;
Heinrich, M.
;
Aberle, A.G.
;
Hoex, B.