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Browsing by Author BRAM HOEX

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Showing results 48 to 59 of 59 < previous 
Issue DateTitleAuthor(s)
Sep-2012Polarisation analysis of luminescence for the characterisation of defects in silicon wafer solar cellsPeloso, M.P.; Lew, J.S.; Chaturvedi, P. ; Hoex, B. ; Aberle, A.G. 
25-Apr-2011Polarization analysis of luminescence for the characterization of silicon wafer solar cellsPeloso, M.P.; Hoex, B. ; Aberle, A.G. 
2013Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacksDuttagupta, S.; Ma, F.-J. ; Lin, S.F.; Mueller, T.; Aberle, A.G. ; Hoex, B. 
2012Rear-side contact opening by laser ablation for industrial screen-printed aluminium local back surface field silicon wafer solar cellsDu, Z.; Palina, N.; Chen, J.; Hong, M.; Hoex, B. 
1-Nov-2013Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopyHoex, Bram ; Bosman, Michel ; Nandakumar, Naomi ; Kessels, WMM
2009Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline siliconDingemans, G.; Engelhart, P.; Seguin, R.; Einsele, F.; Hoex, B. ; Van De Sanden, M.C.M.; Kessels, W.M.M.
2012State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cellsDuttagupta, S.; Lin, F. ; Shetty, K.D.; Wilson, M.; Ma, F.-J. ; Lin, J. ; Aberle, A.G. ; Hoex, B. 
Jan-2012Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3Hoex, B. ; van de Sanden, M.C.M.; Schmidt, J.; Brendel, R.; Kessels, W.M.M.
Jan-2012Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3Hoex, B. ; van de Sanden, M.C.M.; Schmidt, J.; Brendel, R.; Kessels, W.M.M.
Aug-2010The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitterBock, R.; Schmidt, J.; Mau, S.; Hoex, B. ; Brendel, R.
14-Jan-2013The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3Liao, B.; Stangl, R.; Mueller, T.; Lin, F. ; Bhatia, C.S. ; Hoex, B. 
2013Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acidLiu, L.; Lin, F. ; Heinrich, M.; Aberle, A.G. ; Hoex, B. 
Showing results 48 to 59 of 59 < previous