Browsing by Author LIU RONG

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 26 to 45 of 60 < previous   next >
Issue DateTitleAuthor(s)
15-Nov-2000Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputteringTay, S.T.; Jiang, X.H.; Huan, C.H.A. ; Wee, A.T.S. ; Liu, R. 
Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
15-May-2006Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
2006Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxyFan, W.J.; Cheah, W.K.; Yoon, S.F.; Zhang, D.H.; Liu, R. ; Wee, A.T.S. 
Jan-2003Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profilingYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Zhou, F.F.; See, A.
2002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S. 
1-Mar-2005Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ng, T.K.; Loke, W.K.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T.S. 
15-Jan-2003Low dielectric constant a-SiOC:H films as copper diffusion barrierKoh, Y.W.; Loh, K.P. ; Rong, L. ; Wee, A.T.S. ; Huang, L.; Sudijono, J.
Nov-2003Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructuresLau, G.S.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Tjiu, W.C.; Zhang, J.
Feb-2002Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, T.S.A. 
Aug-2006Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)PAN, J.S.P; LIU, R.S.L ; TOK, E.S.T 
10-Jun-2003Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfacesPan, J.S.; Tok, E.S. ; Huan, C.H.A. ; Liu, R.S. ; Chai, J.W.; Ong, W.J.; Toh, K.C.
9-May-2011Room temperature ferromagnetism in partially hydrogenated epitaxial grapheneXie, L.; Wang, X.; Lu, J.; Ni, Z.; Luo, Z.; Mao, H. ; Wang, R.; Wang, Y.; Huang, H. ; Qi, D. ; Liu, R. ; Yu, T.; Shen, Z.; Wu, T.; Peng, H.; Özyilmaz, B. ; Loh, K. ; Wee, A.T.S. ; Ariando ; Chen, W. 
Jan-2004Roughening behavior in Si/SiGe heterostructures under O2 + bombardmentLau, G.S.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Zhang, J.
28-Mar-2003Selective area growth of aligned carbon nanotubes by ion beam surface modificationGohel, A.; Chin, K.C. ; Lim, K.Y.; Tay, S.T.; Liu, R. ; Chen, G.S.; Wee, A.T.S. 
Jul-2006Self-organized nanodot formation on InP(1 0 0) by oxygen ion sputteringTan, S.K.; Liu, R. ; Sow, C.H. ; Wee, A.T.S. 
1-Jun-2006Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etchingZhang, J.; Turner, S.G.; Chiam, S.Y.; Liu, R. ; Tok, E.S. ; Wee, A.T.S. ; Huan, A.C.H.; Kelly, I.; Mulcahy, C.P.A.
15-Jan-2003SIMS backside depth profiling of ultra shallow implantsYeo, K.L.; Wee, A.T.S. ; See, A.; Liu, R. ; Ng, C.M.
May-2002SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substratesYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Ng, C.M.; See, A.
20-Jan-2002Sims depth profiling analysis of Cu/Ta/SiO2 interfacial diffusion at different annealing temperatureLiu, L. ; Gong, H. ; Wang, Y. ; Wee, A.T.S. ; Liu, R.