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LIU RONG
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Showing results 21 to 40 of 60
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Issue Date
Title
Author(s)
27-Oct-2003
Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
Ho, V.
;
Teo, L.W.
;
Choi, W.K.
;
Chim, W.K.
;
Tay, M.S.
;
Antoniadis, D.A.
;
Fitzgerald, E.A.
;
Du, A.Y.
;
Tung, C.H.
;
Liu, R.
;
Wee, A.T.S.
Aug-2003
Effects of first rapid thermal annealing temperature on Co silicide formation
Peng, H.J.
;
Shen, Z.X.
;
Lim, E.H.
;
Lai, C.W.
;
Liu, R.
;
Wee, A.T.S.
;
Sameer, A.
;
Dai, J.Y.
;
Zhang, B.C.
;
Zheng, J.Z.
2006
Effects of O2 dissociation on a porous platinum coating in the thermal oxidation of GaAs
Hultquist, G.
;
Graham, M.J.
;
Wee, A.T.S.
;
Liu, R.
;
Sproule, G.I.
;
Dong, Q.
;
Anghel, C.
Sep-2005
GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
Cheah, W.K.
;
Fan, W.J.
;
Yoon, S.F.
;
Zhang, D.H.
;
Ng, B.K.
;
Loke, W.K.
;
Liu, R.
;
Wee, A.T.S.
14-Feb-2002
Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides
Zhang, J.
;
Woods, N.J.
;
Breton, G.
;
Price, R.W.
;
Hartell, A.D.
;
Lau, G.S.
;
Liu, R.
;
Wee, A.T.S.
;
Tok, E.S.
15-Nov-2000
Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputtering
Tay, S.T.
;
Jiang, X.H.
;
Huan, C.H.A.
;
Wee, A.T.S.
;
Liu, R.
Jun-2002
Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC
Chang, W.
;
Feng, Z.C.
;
Lin, J.
;
Liu, R.
;
Wee, A.T.S.
;
Tone, K.
;
Zhao, J.H.
15-May-2006
Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAs
Cheah, W.K.
;
Fan, W.J.
;
Yoon, S.F.
;
Loke, W.K.
;
Liu, R.
;
Wee, A.T.S.
2006
Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxy
Fan, W.J.
;
Cheah, W.K.
;
Yoon, S.F.
;
Zhang, D.H.
;
Liu, R.
;
Wee, A.T.S.
Jan-2003
Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
Yeo, K.L.
;
Wee, A.T.S.
;
Liu, R.
;
Zhou, F.F.
;
See, A.
2002
Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealing
Loh, S.W.
;
Zhang, D.H.
;
Liu, R.
;
Li, C.Y.
;
Wee, A.T.S.
1-Mar-2005
Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
Cheah, W.K.
;
Fan, W.J.
;
Yoon, S.F.
;
Ng, T.K.
;
Loke, W.K.
;
Zhang, D.H.
;
Mei, T.
;
Liu, R.
;
Wee, A.T.S.
15-Jan-2003
Low dielectric constant a-SiOC:H films as copper diffusion barrier
Koh, Y.W.
;
Loh, K.P.
;
Rong, L.
;
Wee, A.T.S.
;
Huang, L.
;
Sudijono, J.
Nov-2003
Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructures
Lau, G.S.
;
Tok, E.S.
;
Liu, R.
;
Wee, A.T.S.
;
Tjiu, W.C.
;
Zhang, J.
Feb-2002
Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
Feng, Z.C.
;
Yang, T.R.
;
Liu, R.
;
Wee, T.S.A.
Aug-2006
Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)
PAN, J.S.P
;
LIU, R.S.L
;
TOK, E.S.T
10-Jun-2003
Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces
Pan, J.S.
;
Tok, E.S.
;
Huan, C.H.A.
;
Liu, R.S.
;
Chai, J.W.
;
Ong, W.J.
;
Toh, K.C.
9-May-2011
Room temperature ferromagnetism in partially hydrogenated epitaxial graphene
Xie, L.
;
Wang, X.
;
Lu, J.
;
Ni, Z.
;
Luo, Z.
;
Mao, H.
;
Wang, R.
;
Wang, Y.
;
Huang, H.
;
Qi, D.
;
Liu, R.
;
Yu, T.
;
Shen, Z.
;
Wu, T.
;
Peng, H.
;
Özyilmaz, B.
;
Loh, K.
;
Wee, A.T.S.
;
Ariando
;
Chen, W.
Jan-2004
Roughening behavior in Si/SiGe heterostructures under O2 + bombardment
Lau, G.S.
;
Tok, E.S.
;
Liu, R.
;
Wee, A.T.S.
;
Zhang, J.
28-Mar-2003
Selective area growth of aligned carbon nanotubes by ion beam surface modification
Gohel, A.
;
Chin, K.C.
;
Lim, K.Y.
;
Tay, S.T.
;
Liu, R.
;
Chen, G.S.
;
Wee, A.T.S.