Browsing by Author LIU RONG

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Issue DateTitleAuthor(s)
Aug-2004Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuitsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
3-Jun-2002Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, W.J.; Yoon, S.F.; Ng, T.K.; Wang, S.Z.; Loke, W.K.; Liu, R. ; Wee, A. 
20-Jan-2002Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, A.T.S. 
2003Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs [100] by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Wicaksono, S.; Liu, R. ; Wee, A.T.S. 
1-Aug-2004Determination of nitrogen composition in GaNxAs1-x epilayer on GaAsFan, W.J.; Yoon, S.F.; Cheah, W.K.; Loke, W.K.; Ng, T.K.; Wang, S.Z.; Liu, R. ; Wee, A. 
Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.
27-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
Aug-2003Effects of first rapid thermal annealing temperature on Co silicide formationPeng, H.J.; Shen, Z.X. ; Lim, E.H.; Lai, C.W.; Liu, R. ; Wee, A.T.S. ; Sameer, A.; Dai, J.Y.; Zhang, B.C.; Zheng, J.Z.
2006Effects of O2 dissociation on a porous platinum coating in the thermal oxidation of GaAsHultquist, G.; Graham, M.J.; Wee, A.T.S. ; Liu, R. ; Sproule, G.I.; Dong, Q.; Anghel, C.
Sep-2005GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layerCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
14-Feb-2002Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZhang, J.; Woods, N.J.; Breton, G.; Price, R.W.; Hartell, A.D.; Lau, G.S.; Liu, R. ; Wee, A.T.S. ; Tok, E.S. 
15-Nov-2000Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputteringTay, S.T.; Jiang, X.H.; Huan, C.H.A. ; Wee, A.T.S. ; Liu, R. 
Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
15-May-2006Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
2006Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxyFan, W.J.; Cheah, W.K.; Yoon, S.F.; Zhang, D.H.; Liu, R. ; Wee, A.T.S. 
Jan-2003Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profilingYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Zhou, F.F.; See, A.
2002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S. 
1-Mar-2005Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ng, T.K.; Loke, W.K.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T.S. 
15-Jan-2003Low dielectric constant a-SiOC:H films as copper diffusion barrierKoh, Y.W.; Loh, K.P. ; Rong, L. ; Wee, A.T.S. ; Huang, L.; Sudijono, J.
Nov-2003Nanostructure formation by O2 + ion sputtering of Si/SiGe heterostructuresLau, G.S.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Tjiu, W.C.; Zhang, J.