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| Issue Date | Title | Author(s) |
| 2000 | A novel method for the De-embedding of S-parameters of double heterojunction δ-doped PHEMTs - Modeling and measurements | Rao, R.V.V.V.J. ; Joe, J. ; Chia, Y.W.M. ; Ang, K.S.; Wang, H.; Ng, G.I. |
| 3-Jul-1997 | Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator | Rao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N. |
| 1999 | Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETs | Rao, Rapeta V.V.V.J. ; Chongt, T.C.; Tan, L.S. ; Lau, W.S. |
| 1999 | Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parameters | Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. |
| 1999 | Experimental determination of on and off state small-signal equivalent circuit of δ-doped PHEMTs | Rao, Rapeta V.V.V.J. ; Joe, J. ; Chia, Y.W.Michael ; Ang, K.S.; Wang, H.; Ng, G.I. |
| 15-Oct-1998 | Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers | Rao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Geng, C. ; Lim, N. |
| 1999 | Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model development | Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J. |
| 8-Jul-1999 | Method for determining the source and drain resistance of double heterojunction δ-doped PHEMTs | Rao, R.V.V.V.J. ; Joe, J. ; Chia, Y.W.M. ; Ang, K.S.; Ng, G.I. |
| 1999 | Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices | Rao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J. |
| 5-Oct-2000 | Quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices | Rao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S.; Liou, J.J. |
| Jun-2000 | Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate Ins | Rao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. |
| Sep-1999 | Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes | Rao, R.V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Lim, N. |
