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Issue DateTitleAuthor(s)
Jun-2010A simulation study of graphene-nanoribbon tunneling FET with heterojunction channelLam, K.-T.; Seah, D.; Chin, S.-K.; Bala Kumar, S. ; Samudra, G. ; Yeo, Y.-C. ; Liang, G. 
2008A study of spin relaxation on spin transfer switching of a noncollinear magnetic multilayer structureChung, N.L.; Jalil, M.B.A. ; Tan, S.G.; Guo, J. ; Kumar, S.B. 
1-Apr-2011Conductance modulation in graphene nanoribbon under transverse asymmetric electric potentialBala Kumar, S. ; Fujita, T. ; Liang, G. 
2007Effect of capping layer on the spin accumulation and magnetoresistance of a current-perpendicular-to-plane spin valveBala Kumar, S. ; Tan, S.G. ; Jalil, M.B.A. 
Jun-2007Effect of interfacial spin flip and momentum scattering on magnetoresistanceKumar, S.B. ; Tan, S.G. ; Jalil, M.B.A. 
Apr-2010Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistorsLam, K.-T.; Chin, S.-K.; Seah, D.W.; Bala Kumar, S. ; Liang, G. 
2006Electrical control of ballistic spin-dependent conductance through magneto-electric barriers in the 2D-electron gas of GaAs heterostructureTan, S.; Jalil, M. ; Kumar, S. ; Teo, K. ; Zheng, Y.; Liew, T.
9-Sep-2009High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic deviceBala Kumar, S. ; Tan, S.G.; Jalil, M.B.A. ; Liang, G.-C.
22-Aug-2011High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effectsLiang, G. ; Bala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
29-Oct-2012High magnetoresistance in graphene nanoribbon heterojunctionBala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
2007Influence of spin relaxation on magnetoresistanceTan, S.G. ; Jalil, M.B.A. ; Bala Kumar, S. 
2008Interfacial resistance and spin flip effects on the magnetoresistance of a current perpendicular to plane spin valveChung, N.L.; Jalil, M.B.A. ; Tan, S.G. ; Bala Kumar, S. 
28-Aug-2013Klein tunneling in graphene systems under the influence of magnetic fieldBala Kumar, S. ; Jalil, M.B.A. ; Tan, S.G.
2006Layer thickness effect on the magnetoresistance of a current-perpendicular- to-plane spin valveTan, S.G. ; Jalil, M.B.A. ; Kumar, S.B. ; Han, G.C. ; Zheng, Y.K.
2006Magnetoresistance effects arising from interfacial resistance in a current-perpendicular-to-plane spin-valve trilayerKumar, S.B. ; Jalil, M.B.A. ; Tan, S.G. ; Leong, Z.Y.
Mar-2007Magnetoresistance modulation due to interfacial conductance of current perpendicular-to-plane spin valvesLeong, Z.Y.; Tan, S.G.; Jalil, M.B.A. ; Kumar, S.B. ; Han, G.C.
2006Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertionsBae, S. ; Tan, S.G.; Jalil, M.B.A. ; Kumar, S.B. ; Teo, K.L. ; Leong, Z.Y.; Liew, T.
1-Aug-2010Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulationKumar, S.B. ; Jalil, M.B.A. ; Tan, S.G.; Liang, G. 
2006MR enchancement in CPP spin valve by insertion of a ferromagnetic layer within the spacer layerKumar, S. ; Tan, S.; Jalil, M. ; Teo, K. 
2008Nanoelectronic logic device based on the manipulation of magnetic and electric barriersKumar, S.B. ; Tan, S.G.; Jalil, M.B.A. ; Cheung, P.Q.; Jiang, Y.