Browsing by Author PARK CHANG SEO

Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
2003A Novel Approach for Integration of Dual Metal Gate Process Using Ultra Thin Aluminum Nitride Buffer LayerPark, C.S. ; Cho, B.J. ; Yan, D.A.; Balasubramanian, N.; Kwong, D.-L.
May-2003An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layerPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
Nov-2005Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinningPark, C.S. ; Cho, B.J. 
2005Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectricPark, C.S. ; Cho, B.J. ; Hwang, W.S.; Loh, W.Y.; Tang, L.J.; Kwong, D.-L.
Sep-2004Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate processPark, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
May-2006Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stackJoo, M.S. ; Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
8-Jan-2008Method of fabricating a CMOS device with dual metal gate electrodesPARK, CHANG SEO ; CHO, BYUNG JIN ; BALASUBRAMANIAN, NARAYANAN T. 
Nov-2004MOS characteristics of substituted Al gate on high-κ dielectricPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
Nov-2004MOS characteristics of substituted Al gate on high-κ dielectricPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
Sep-2004MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
2004Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning freePark, C.S. ; Cho, B.J. ; Tang, L.J.; Kwong, D.-L.
7-Dec-2006Thermally stable fully silicided Hf silicide metal gate electrodePARK, CHANG SEO ; CHO, BYUNG JIN 
Jun-2004Thermally stable fully silicided Hf-silicide metal-gate electrodePark, C.S. ; Cho, B.J. ; Kwong, D.-L.