Browsing by Author SEE KAI HUNG,ALEX

Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
2000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
2001Direct formation of C54 phase on the basis of C40 TiSi2 and its applications in deep sub-micron technologyChen, S.Y.; Shen, Z.X. ; Xu, S.Y. ; See, A.K. ; Chan, L.H.; Li, W.S. 
2001Effect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurementsChu, L.W.; Chim, W.K. ; Pey, K.L. ; See, A. 
1999Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoidCha, C.-L.; Tee, K.-C.; Chor, E.-F. ; Gong, H. ; Prasad, K.; Bourdillon, A.J. ; See, A. ; Chan, L.; Lee, M.M.-O.
Sep-2002Evaluation of the silicon capping technique in SIMSNg, C.M.; Wee, A.T.S. ; Huan, C.H.A.; Ho, C.S.; Yakovlev, N.; See, A. 
1999Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical propertiesChua, H.N.; Pey, K.L. ; Siah, S.Y.; Ong, L.Y.; Lim, E.H.; Gan, C.L.; See, K.H. ; Ho, C.S.
2000Improved PECVD pre-metal oxide liner deposition process with low residual charge non-uniformity in film to avoid excessive PIDCha, C.L.; Vassiliev, V.; Chor, E.F. ; See, A.K. 
2001In-line plasma induced charging monitor for 0.15μm polysilicon gate etchingChong, D.; Won Jong Yoo; Ting Cheong Ang; Sang Yee Loong; Cha, R.; Pin Hian Lee; Layadi, N.; Chan, L.; See, A. 
Dec-2001Laser-induced titanium disilicide formation for submicron technologiesChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Shen, Z.X. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
2001Mask error enhancement factor for sub 0.13μm lithographyTan, S.K.; Lin, Q.; Quan, C. ; Tay, C.J. ; See, A. 
1-Jan-2002Method to form MOS transistors with shallow junctions using laser annealingCHONG, YUNG FU; PEY, KIN LEONG ; SEE, ALEX ; WEE, ANDREW THYE SHEN 
Dec-2001Nickel silicide formation on Si(100) and poly-Si with a presilicide N2 + implantationLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Dai, J.Y.; See, A. 
21-May-2002Process flow for a performance enhanced MOSFET with self-aligned, recessed channelSNEELAL, SNEEDHARAN PILLAI; POH, FRANCIS YOUG WEE; LEE, JAMES YONG MENG; SEE, ALEX ; LAU, C. K. ; SAMUDRA, GANESH SHANKAR 
15-Aug-2006Process flow for a performance enhanced MOSFET with self-aligned, recessed channelSNEELAL, SNEEDHARAN PILLAI; POH, FRANCIS; LEE, JAMES; SEE, ALEX ; LAU, C. K. ; SAMUDRA, GANESH SHANKAR 
2000Steep retrograde indium channel profiling for high performance nMOSFETs device fabricationOng, S.Y.; Chor, E.F. ; Leung, Y.K.; Lee, J.; Li, W.S. ; See, A. ; Chan, L.
2002Synthesis of pure C40 TiSi2 for Si wafer fabricationChen, S.Y.; Shen, Z.X. ; Xu, S.Y. ; See, A.K. ; Chan, L.H.; Li, W.S. 
2000Ultra shallow depth profiling of B deltas in Si using a CAMECA IMS 6fNg, C.M.; Wee, A.T.S. ; Huan, C.H.A. ; See, A.