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| Issue Date | Title | Author(s) |
| 2011 | A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs | Ding, Y.; Cheng, R. ; Koh, S.-M.; Liu, B.; Gyanathan, A.; Zhou, Q. ; Tong, Y.; Lim, P.S.-Y.; Han, G. ; Yeo, Y.-C. |
| 2012 | A new liner stressor (GeTe) featuring stress enhancement due to very large phase-change induced volume contraction for p-channel FinFETs | Cheng, R. ; Ding, Y.; Koh, S.-M.; Gyanathan, A.; Bai, F.; Liu, B.; Yeo, Y.-C. |
| 2013 | Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5) | Cheng, R. ; Liu, B.; Guo, P.; Yang, Y.; Zhou, Q. ; Gong, X.; Dong, Y.; Tong, Y.; Bourdelle, K.; Daval, N.; Delprat, D.; Nguyen, B.-Y.; Augendre, E.; Yeo, Y.-C. |
| 2010 | Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor | Cheng, R. ; Liu, B.; Yeo, Y.-C. |
| 2012 | Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate | Gong, X.; Su, S.; Liu, B.; Wang, L.; Wang, W.; Yang, Y.; Cheng, R. ; Kong, E.; Cheng, B.; Han, G. ; Yeo, Y.-C. |
| 2013 | Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain | Liu, B.; Zhan, C.; Yang, Y.; Cheng, R. ; Guo, P.; Zhou, Q. ; Kong, E.Y.-J.; Daval, N.; Veytizou, C.; Delprat, D.; Nguyen, B.-Y.; Yeo, Y.-C. |
| 2013 | Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation | Guo, P.; Zhan, C.; Yang, Y.; Gong, X.; Liu, B.; Cheng, R. ; Wang, W.; Pan, J.; Zhang, Z.; Tok, E.S. ; Han, G. ; Yeo, Y.-C. |
| 2013 | Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation | Gong, X.; Han, G. ; Bai, F.; Su, S.; Guo, P.; Yang, Y.; Cheng, R. ; Zhang, D.; Zhang, G.; Xue, C.; Cheng, B.; Pan, J. ; Zhang, Z.; Tok, E.S. ; Antoniadis, D.; Yeo, Y.-C. |
| 2013 | High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications | Liu, B.; Gong, X.; Cheng, R. ; Guo, P.; Zhou, Q. ; Owen, M.H.S.; Guo, C.; Wang, L.; Wang, W.; Yang, Y.; Yeo, Y.-C. ; Wan, C.-T.; Chen, S.-H.; Cheng, C.-C.; Lin, Y.-R.; Wu, C.-H.; Ko, C.-H.; Wann, C.H. |
| 21-Feb-2013 | Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor | Ding, Y.; Cheng, R. ; Du, A.; Yeo, Y.-C. |
| 2011 | Modeling of a new liner stressor comprising Ge 2Sb 2Te 5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel | Cheng, R. ; Ding, Y.; Liu, B.; Yeo, Y.-C. |
| 2013 | Phase change liner stressor for strain engineering of P-channel FinFETs | Ding, Y.; Cheng, R. ; Koh, S.-M.; Liu, B.; Yeo, Y.-C. |
| 2013 | Relaxed and strained patterned germanium-tin structures: A Raman scattering study | Cheng, R. ; Wang, W.; Gong, X.; Sun, L.; Guo, P.; Hu, H.; Shen, Z.; Han, G. ; Yeo, Y.-C. |
| 2012 | Strain engineering of ultra-thin silicon-on-insulator structures using ion implant | Ding, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. |
| 2013 | Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization | Ding, Y.; Cheng, R. ; Zhou, Q. ; Du, A.; Daval, N.; Nguyen, B.-Y.; Yeo, Y.-C. |
| 2012 | Ultra-thin-body In 0.7Ga 0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology | Gong, X.; Zhu, Z.; Kong, E.; Cheng, R. ; Subramanian, S.; Goh, K.H.; Yeo, Y.-C. |
| 2013 | Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology | Gong, X.; Han, G. ; Su, S.; Cheng, R. ; Guo, P.; Bai, F.; Yang, Y.; Zhou, Q. ; Liu, B.; Goh, K.H.; Zhang, G.; Xue, C.; Cheng, B.; Yeo, Y.-C. |
