Browsing by Author OH HOON-JUNG

Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)
2008Energy-band alignments of Hf O2 on p-GaAs substratesDalapati, G.K.; Oh, H.-J. ; Lee, S.J. ; Sridhara, A.; Wong, A.S.W.; Chi, D.
2007GaAs heteroepitaxy on SiGe-on-insulator using ge condensation and migration enhanced epitaxyOh, H.J. ; Choi, K.J.; Loh, W.Y. ; Htoo, T. ; Chua, S.J. ; Cho, B.J. 
2011High-k integration and interface engineering for III-V MOSFETsOh, H.J. ; Sumarlina, A.B.S.; Lee, S.J. 
2007Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devicesZang, H.; Loh, W.Y. ; Oh, H.J. ; Choi, K.J.; Nguyen, H.S.; Lo, G.Q.; Cho, B.J. 
2007Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniquesOh, H.J. ; Choi, K.J.; Loh, W.Y.; Htoo, T. ; Chua, S.J. ; Cho, B.J. 
2010Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivationOh, H.-J. ; Suleiman, S.A.B.; Lee, S. 
2008Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gateLin, J.Q.; Lee, S.J. ; Oh, H.J. ; Lo, G.Q.; Kwong, D.L.; Chi, D.Z.
Dec-2007Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performanceLoh, W.-Y.; Zang, H.; Oh, H.-J. ; Choi, K.-J.; Nguyen, H.S.; Lo, G.-Q.; Cho, B.J. 
2008Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopyOh, H.J. ; Lin, J.Q.; Lee, S.J. ; Dalapati, G.K.; Sridhara, A.; Chi, D.Z.; Chua, S.J.; Lo, G.Q.; Kwong, D.L.
2010Study on thermal stability of plasma-PH3 passivated HfAlO/In0.53Ga0.47 as gate stack for advanced metal-oxide-semiconductor field effect transistorSuleiman, S.A.; Oh, H.J. ; Du, A.; Ng, C.M.; Lee, S.J. 
2007The effect of interfacial layer of high-K dielectrics on GaAs substrateTong, Y.; Dalapati, G.K.; Oh, H.J. ; Cho, B.J. 
2009Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectricOh, H.J. ; Lin, J.Q.; Suleiman, S.A.B.; Lo, G.Q.; Kwong, D.L.; Chi, D.Z.; Lee, S.J.