Browsing by Author CHENG ZHIYUAN

Showing results 1 to 12 of 12
Issue DateTitleAuthor(s)
15-May-1998A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiationCheng, Z.Y. ; Ling, C.H. 
2000A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFETCheng, Z.Y. ; Ling, C.H. 
1-Dec-1997An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurementsLing, C.H. ; Cheng, Z.Y. 
Dec-2000Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide filmsAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
1-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
1-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
2000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
Jan-2000Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFETCheng, Zhi-Yuan ; Ling, C.H. 
2-Jan-1997Trap generation in CVD SiO2 subjected to 253.7nm ultraviolet irradiationLing, C.H. ; Cheng, Z.Y.