Browsing by Author LIN FEN

Showing results 1 to 19 of 19
Issue DateTitleAuthor(s)
2008Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbersLin, F. ; Xiang, N. ; Chua, S.J. ; Irshad, A.; Roither, S.; Pugzlys, A.; Baltuska, A.; Chen, P.; Chow, S.Y.
2015Accurate extraction of the series resistance of aluminum local back surface field silicon wafer solar cellsChen, Jia; Du, Zheren ; Ma, Fajun ; Lin, Fen ; Sarangi, Debajyoti ; Hoex, Bram ; Aberle, Armin Gerhard 
2012Aluminum local back surface field solar cells with inkjet-opened rear dielectric filmsLiu, L.; Du, Z.; Lin, F. ; Hoex, B. ; Aberle, A.G. 
2008Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbersLin, F. ; Xiang, N. ; Chen, P.; Chua, S.J. ; Irshad, A.; Roither, S.; Pugzlys, A.; Baltuska, A.
2006Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nmLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Liu, H.F. ; Chua, S.J. 
Jun-2013Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactorDuttagupta, S.; Lin, F. ; Shetty, K.D.; Aberle, A.G. ; Hoex, B. 
25-Sep-2013Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activationLiao, B.; Stangl, R.; Ma, F. ; Mueller, T.; Lin, F. ; Aberle, A.G. ; Bhatia, C.S. ; Hoex, B. 
Oct-2012Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacksLin, F. ; Duttagupta, S.; Shetty, K.D.; Boreland, M.; Aberle, A.G. ; Hoex, B. 
26-Mar-2007GaN-based semiconductor saturable absorber mirror operating around 415 nmXiang, N. ; Lin, F. ; Li, H.P. ; Liu, H.F. ; Liu, W.; Ji, W. ; Chua, S.J.
2011High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVDDutta Gupta, S.; Hoex, B. ; Lin, F. ; Mueller, T.; Aberle, A.G. 
1-Aug-2017Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiNXLin, Fen ; Toh, Mei Gi ; Thway, Maung ; Li, Xinhang ; Nandakumar, Naomi ; Gay, Xavier; Dielissen, Bas; Raj, Samuel ; Aberle, Armin G 
2013Investigation of screen-printed rear contacts for aluminum local back surface field silicon wafer solar cellsChen, J.; Tey, Z.H.J.; Du, Z.R.; Lin, F. ; Hoex, B. ; Aberle, A.G. 
2008Investigation of the V-pit related morphological and optical properties of InGaNGaN multiple quantum wellsLin, F. ; Xiang, N. ; Chen, P.; Chow, S.Y.; Chua, S.J.
2012Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide filmsLin, F. ; Hoex, B. ; Koh, Y.H.; Lin, J.J. ; Aberle, A.G. 
2013Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide filmsLin, F. ; Hoex, B. ; Koh, Y.H.; Lin, J. ; Aberle, A.G. 
2012State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cellsDuttagupta, S.; Lin, F. ; Shetty, K.D.; Wilson, M.; Ma, F.-J. ; Lin, J. ; Aberle, A.G. ; Hoex, B. 
2008Suppression of interference-induced reflectivity fluctuations in GaN-based semiconductor saturable absorber mirrorLin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Chua, S.J. 
14-Jan-2013The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3Liao, B.; Stangl, R.; Mueller, T.; Lin, F. ; Bhatia, C.S. ; Hoex, B. 
2013Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acidLiu, L.; Lin, F. ; Heinrich, M.; Aberle, A.G. ; Hoex, B.