Browsing by Author Tung, Chih-Hang

Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
2008A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stackChin, H.-C.; Zhu, M. ; Lee, Z.-C.; Liu, X.; Tan, K.-M.; Lee, H.K.; Shi, L. ; Tang, L.-J.; Tung, C.-H. ; Lo, G.-Q.; Tan, L.-S. ; Yeo, Y.-C. 
2000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
1997FIB precision TEM sample preparation using carbon replicaSheng, T.T. ; Goh, G.P.; Tung, C.H. ; Wang, John L.F. ; Cheng, Jeng Kou
Dec-2001Laser-induced titanium disilicide formation for submicron technologiesChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Shen, Z.X. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
2002Physical analysis of Ti-migration in 33 Å gate oxide breakdownPey, K.L. ; Tung, C.H. ; Lin, W.H.; Radhakrishnan, M.K. 
May-1997Precision transmission electron microscopy sample preparation using a focused ion beam by extraction methodSheng, T.T. ; Goh, G.P.; Tung, C.H. ; Wang, L.F. 
May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
1998Superiority of N2O plasma annealing over O2 plasma annealing for amorphous tantalum pentoxide (Ta2O5) filmsLau, Wai Shing ; Perera, Merinnage Tamara Chandima; Babu, Premila; Ow, Aik Keong; Han, Taejoon; Sandler, Nathan P.; Tung, Chih Hang ; Sheng, Tan Tsu ; Chu, Paul K.