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LIU HONGFEI
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Showing results 1 to 20 of 21
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Issue Date
Title
Author(s)
2006
Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxy
Liu, H.F.
;
Dixit, V.
;
Xiang, N.
Apr-2007
Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy
Liu, H.F.
;
Xiang, N.
;
Zhou, H.L.
;
Chua, S.J.
;
Yang, P.
;
Moser, H.O.
15-Apr-2006
Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy
Liu, H.F.
;
Xiang, N.
;
Chua, S.J.
Nov-2007
Comparative studies of passively mode-locked Nd:Gd0.64y 0.36VO4 laser and Nd:GdVO4 laser with semiconductor saturable absorber mirrors
Kong, J.
;
Chan, C.C.
;
Tang, D.Y.
;
Xiang, N.
;
Liu, H.F.
;
Pessa, M.
;
Qin, L.J.
2006
Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm
Lin, F.
;
Xiang, N.
;
Wang, X.C.
;
Arokiaraj, J.
;
Liu, W.
;
Liu, H.F.
;
Chua, S.J.
2006
Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
Dixit, V.
;
Liu, H.F.
;
Xiang, N.
Sep-2006
Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron
Dixit, V.
;
Liu, H.F.
;
Xiang, N.
2006
Effect of indium segregation on optical and structural properties of GaInNAsGaAs quantum wells at emission wavelength of 1.3 μm
Liu, H.F.
;
Dixit, V.
;
Xiang, N.
2-Feb-2006
Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy
Liu, H.F.
;
Xiang, N.
;
Chua, S.J.
;
Tripathy, S.
26-Mar-2007
GaN-based semiconductor saturable absorber mirror operating around 415 nm
Xiang, N.
;
Lin, F.
;
Li, H.P.
;
Liu, H.F.
;
Liu, W.
;
Ji, W.
;
Chua, S.J.
28-Oct-2006
Growth of InAs on micro- and nano-scale patterned GaAs(001) substrates by molecular beam epitaxy
Liu, H.F.
;
Xiang, N.
;
Chua, S.J.
26-Mar-2007
Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells
Liu, H.F.
;
Xiang, N.
1-Mar-2006
Influence of GaNAs strain-compensation layers on the optical properties of Galn(N)As/GaAs quantum wells upon annealing
Liu, H.F.
;
Xiang, N.
2006
Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy
Liu, H.F.
;
Xiang, N.
;
Chua, S.J.
2016
Large-area zinc oxide nanorod arrays templated by nanoimprint lithography: Control of morphologies and optical properties
Zhang C.
;
Huang X.
;
Liu H.
;
Chua S.J.
;
Ross C.A.
Apr-2007
Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells
Xiang, N.
;
Liu, H.F.
;
Kong, J.
;
Tang, D.Y.
;
Pessa, M.
15-May-2006
Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x
Liu, H.F.
;
Xiang, N.
;
Tripathy, S.
;
Chua, S.J.
15-May-2006
Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x
Liu, H.F.
;
Xiang, N.
;
Tripathy, S.
;
Chua, S.J.
15-May-2006
Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x
Liu, H.F.
;
Xiang, N.
;
Tripathy, S.
;
Chua, S.J.
1-May-2006
Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing
Liu, H.F.
;
Xiang, N.
;
Chua, S.J.
;
Pessa, M.