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| Issue Date | Title | Author(s) |
| 2006 | Anneal-induced interdiffusion in 1.3-μm GaInNAs/GaAs quantum well structures grown by molecular-beam epitaxy | Liu, H.F. ; Dixit, V.; Xiang, N. |
| Apr-2007 | Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy | Liu, H.F. ; Xiang, N. ; Zhou, H.L.; Chua, S.J.; Yang, P. ; Moser, H.O. |
| 15-Apr-2006 | Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy | Liu, H.F. ; Xiang, N. ; Chua, S.J. |
| Nov-2007 | Comparative studies of passively mode-locked Nd:Gd0.64y 0.36VO4 laser and Nd:GdVO4 laser with semiconductor saturable absorber mirrors | Kong, J.; Chan, C.C.; Tang, D.Y.; Xiang, N. ; Liu, H.F. ; Pessa, M.; Qin, L.J. |
| 2006 | Design and optimization of GaN-based semiconductor saturable absorber mirror operating at around 415 nm | Lin, F. ; Xiang, N. ; Wang, X.C.; Arokiaraj, J.; Liu, W.; Liu, H.F. ; Chua, S.J. |
| 2006 | Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths | Dixit, V.; Liu, H.F. ; Xiang, N. |
| Sep-2006 | Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron | Dixit, V.; Liu, H.F. ; Xiang, N. |
| 2006 | Effect of indium segregation on optical and structural properties of GaInNAsGaAs quantum wells at emission wavelength of 1.3 μm | Liu, H.F. ; Dixit, V.; Xiang, N. |
| 2-Feb-2006 | Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy | Liu, H.F. ; Xiang, N. ; Chua, S.J. ; Tripathy, S. |
| 26-Mar-2007 | GaN-based semiconductor saturable absorber mirror operating around 415 nm | Xiang, N. ; Lin, F. ; Li, H.P. ; Liu, H.F. ; Liu, W.; Ji, W. ; Chua, S.J. |
| 28-Oct-2006 | Growth of InAs on micro- and nano-scale patterned GaAs(001) substrates by molecular beam epitaxy | Liu, H.F. ; Xiang, N. ; Chua, S.J. |
| 26-Mar-2007 | Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells | Liu, H.F. ; Xiang, N. |
| 1-Mar-2006 | Influence of GaNAs strain-compensation layers on the optical properties of Galn(N)As/GaAs quantum wells upon annealing | Liu, H.F. ; Xiang, N. |
| 2006 | Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy | Liu, H.F. ; Xiang, N. ; Chua, S.J. |
| Apr-2007 | Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells | Xiang, N. ; Liu, H.F. ; Kong, J.; Tang, D.Y.; Pessa, M. |
| 15-May-2006 | Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x | Liu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J. |
| 15-May-2006 | Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x | Liu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J. |
| 15-May-2006 | Raman scattering probe of anharmonic effects due to temperature and compositional disorder in Ga N x As 1-x | Liu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J. |
| 1-May-2006 | Structural and optical properties of GaInAs/GaAs and GaInNAs/GaNAs multiple quantum wells upon postgrowth annealing | Liu, H.F. ; Xiang, N. ; Chua, S.J.; Pessa, M. |
| 25-Oct-2006 | Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxy | Liu, H.F. ; Xiang, N. ; Tripathy, S.; Chua, S.J. |
