Browsing by Author CHOI WEE KIONG

Select a letter below to browse by last name or type
0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z


Showing results 1 to 20 of 180  next >
Issue DateTitleAuthor(s)
Mar-2008A combined top-down and bottom-up approach for precise placement of metal nanoparticles on siliconChoi, W.K. ; Liew, T.H. ; Chew, H.G.; Zheng, F.; Thompson, C.V.; Wang, Y.; Hong, M.H. ; Wang, X.D.; Li, L.; Yun, J.
Sep-2002A high performance MIM capacitor using HfO 2 dielectricsHu, H.; Zhu, C. ; Lu, Y.F. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. 
2004A MONOS-type flash memory using a high-k HfAlO charge trapping layerTan, Y.N.; Chim, W.K. ; Cho, B.J. ; Choi, W.K. 
1994Analysis of the variation in the field-dependent behavior of thermally oxidized tantalum oxide filmsChoi, W.K. ; Ling, C.H. 
2009Arrayed Si/SiGe nanowire heterostructure formation via Au-catalyzed wet chemical etching methodWang, X.; Pey, K.L.; Choi, W.K. ; Ho, C.K.F.; Fitzgerald, E.; Antoniadis, D.
2009Arrayed sisige nanowire and heterostructure formations via au-assisted wet chemical etching methodWang, X.; Pey, K.L.; Choi, W.K. ; Ho, C.K.F.; Fitzgerald, E.; Antoniadis, D.
20-Nov-2002C-V and DLTS characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloysFeng, W.; Choi, W.K. ; Bera, L.K. ; Mi, J.; Yang, C.Y.
18-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
1-Dec-1998Characterisation of pyramid formation arising from the TMAH etching of siliconChoi, W.K. ; Thong, J.T.L. ; Luo, P.; Tan, C.M.; Chua, T.H.; Bai, Y. 
Jul-2003Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide filmsChoi, W.K. ; Shi, J. ; Chor, E.F. 
Apr-1999Characterization of ge nanocrystals in a-SiO2 synthesized by rapid thermal annealingChoi, W.K. ; Kanakaraju, S. ; Shen, Z.X. ; Li, W.S. 
May-1992Characterization of rf-sputtered yttrium oxide filmsLing, C. ; Bhaskaran, J.; Choi, W. 
20-Sep-2004Clarifying the origin of near-infrared electroluminescence peaks for nanocrystalline germanium in metal-insulator-silicon structuresKan, E.W.H.; Chim, W.K. ; Lee, C.H.; Choi, W.K. ; Ng, T.H.
Feb-2009Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matricesChew, H.G.; Zheng, F.; Choi, W.K. ; Chim, W.K. ; Fitzgerald, E.A.; Foo, Y.L.
2006Conductance-voltage measurements on germanium nanocrystal memory structures and effect of gate electric field couplingNg, T.H.; Chim, W.K. ; Choi, W.K. 
Jan-1995Conduction mechanism of semi-insulating polycrystalline silicon filmsChoi, W.K. 
1-May-1998Conduction mechanisms and interface property of silicon oxide films sputtered under different oxygen concentrationsChoi, W.K. ; Han, K.K.; Choo, C.K.; Chim, W.K. ; Lu, Y.F.
2004Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2Ho, V.; Choi, W.K. ; Chim, W.K. ; Teo, L.W.; Du, A.Y.; Tung, C.H.
2004Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2Ho, V.; Choi, W.K. ; Chim, W.K. ; Teo, L.W.; Du, A.Y.; Tung, C.H.
2004Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2Ho, V.; Choi, W.K. ; Chim, W.K. ; Teo, L.W.; Du, A.Y.; Tung, C.H.