Please use this identifier to cite or link to this item: https://doi.org/10.1088/0960-1317/22/11/113001
Title: Three-dimensional silicon micromachining
Authors: Azimi, S.
Song, J.
Dang, Z.Y.
Liang, H.D.
Breese, M.B.H. 
Issue Date: Nov-2012
Source: Azimi, S., Song, J., Dang, Z.Y., Liang, H.D., Breese, M.B.H. (2012-11). Three-dimensional silicon micromachining. Journal of Micromechanics and Microengineering 22 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/22/11/113001
Abstract: A process for fabricating arbitrary-shaped, two- and three-dimensional silicon and porous silicon components has been developed, based on high-energy ion irradiation, such as 250keV to 1 MeV protons and helium. Irradiation alters the hole current flow during subsequent electrochemical anodization, allowing the anodization rate to be slowed or stopped for low/high fluences. For moderate fluences the anodization rate is selectively stopped only at depths corresponding to the high defect density at the end of ion range, allowing true three-dimensional silicon machining. The use of this process in fields including optics, photonics, holography and nanoscale depth machining is reviewed. © 2012 IOP Publishing Ltd.
Source Title: Journal of Micromechanics and Microengineering
URI: http://scholarbank.nus.edu.sg/handle/10635/99032
ISSN: 09601317
DOI: 10.1088/0960-1317/22/11/113001
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