Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-004-3076-1
Title: Observation of local lattice tilts in strain-relaxed Si 1-xGex using high resolution channeling contrast microscopy
Authors: Seng, H.L. 
Osipowicz, T. 
Zhang, J.
Tok, E.S. 
Issue Date: Nov-2005
Citation: Seng, H.L., Osipowicz, T., Zhang, J., Tok, E.S. (2005-11). Observation of local lattice tilts in strain-relaxed Si 1-xGex using high resolution channeling contrast microscopy. Applied Physics A: Materials Science and Processing 81 (6) : 1163-1166. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-004-3076-1
Abstract: A 'cross-hatch' morphology is often seen in strain-relaxed Si 1-xGex virtual substrates grown using the compositional grading technique. High resolution channeling contrast microscopy measurements, which probe both laterally and vertically into the structure, have revealed the association of such cross-hatch patterns with local lattice-plane bending. In this work, we report the influence of the growth temperature on the extent of the local lattice tilts determined from the channeling contrast measurements. Lines of pileup threading dislocations observed on the surface have also been imaged for the first time, providing us with information on their influence on the lattice-tilt arrangements and orientations. © Springer-Verlag 2004.
Source Title: Applied Physics A: Materials Science and Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/99014
ISSN: 09478396
DOI: 10.1007/s00339-004-3076-1
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