Epitaxial oxides on semiconductors for application in nanoelectronics

Abstract

Epitaxial oxides on semiconductors, maintaining excellent physical properties and chemical stability, are expected to have a variety of potential applications. These include considerations as an alternative gate dielectric replacing silicon dioxide in sub-50 nm Si-based technology; lattice matched Si-oxide-based multilayers and heterostructures for ferroelectric, piezoelectric, and novel device applications; ultrathin silicon-on-insulator or germanium-oninsulator technology, and the development of potential insulators for GaAs-based microelectronics. The topics of this chapter cover the fabrication technique, interface characterization, theoretic calculation, and the device application of the epitaxial oxide on semiconductors in nanoelectronics. © 2007 by Nova Science Publishers, Inc. All rights reserved.