Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98972
Title: Epitaxial oxides on semiconductors for application in nanoelectronics
Authors: Wang, S.J.
Huan, A.C.H. 
Issue Date: 2007
Source: Wang, S.J.,Huan, A.C.H. (2007). Epitaxial oxides on semiconductors for application in nanoelectronics. New Topics in Nanotechnology Research : 1-50. ScholarBank@NUS Repository.
Abstract: Epitaxial oxides on semiconductors, maintaining excellent physical properties and chemical stability, are expected to have a variety of potential applications. These include considerations as an alternative gate dielectric replacing silicon dioxide in sub-50 nm Si-based technology; lattice matched Si-oxide-based multilayers and heterostructures for ferroelectric, piezoelectric, and novel device applications; ultrathin silicon-on-insulator or germanium-oninsulator technology, and the development of potential insulators for GaAs-based microelectronics. The topics of this chapter cover the fabrication technique, interface characterization, theoretic calculation, and the device application of the epitaxial oxide on semiconductors in nanoelectronics. © 2007 by Nova Science Publishers, Inc. All rights reserved.
Source Title: New Topics in Nanotechnology Research
URI: http://scholarbank.nus.edu.sg/handle/10635/98972
ISBN: 1600212913
Appears in Collections:Staff Publications

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