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|Title:||Three-dimensional microstructures in silicon via the combination of light-ion beam writing and electrochemical etching|
|Authors:||Blackwood, D.J. |
|Source:||Blackwood, D.J.,Teo, E.J.,Breese, M.B.H.,Bettiol, A.A. (2004). Three-dimensional microstructures in silicon via the combination of light-ion beam writing and electrochemical etching. Proceedings - Electrochemical Society 9 : 108-116. ScholarBank@NUS Repository.|
|Abstract:||Many state-of-the-art technologies, such as micro-/nano-electromechanical systems, optoelectronics and photonics, require the fabrication of precise three-dimensional structures in semiconductor materials. A major limitation of conventional lithography and silicon etching technologies is that multiple processing steps are required to fabricate free-standing multilevel structures. However, it is known that the mechanism by which a silicon wafer can be electrochemically etched in solutions of hydrofluoric acid depends on its conductivity. This has enabled the development of an alternative mask-less patterning process that combines proton irradiation with electrochemical etching. A high-energy beam of light-ions focused to a small spot by a nuclear microprobe, selectively damages the semiconductor lattice in the irradiated regions. This damage acts as an electrical barrier during subsequent electrochemical etching, so the un-irradiated regions are preferentially removed, leaving a copy of the patterned microstructure. Furthermore the ability to control the depth of damage/implantation introduces the possibility of producing three-dimensional structures.|
|Source Title:||Proceedings - Electrochemical Society|
|Appears in Collections:||Staff Publications|
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