Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mseb.2004.12.023
Title: The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations
Authors: Wang, S.J.
Dong, Y.F.
Huan, C.H.A. 
Feng, Y.P. 
Ong, C.K. 
Keywords: Epitaxial ZrO2
Pulsed laser deposition
X-ray photoelectron spectroscopy
Issue Date: 25-Apr-2005
Citation: Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K. (2005-04-25). The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 (1-3) : 122-126. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2004.12.023
Abstract: The epitaxial ZrO2 on silicon as alternative gate dielectric, including film growth, interface characterization and electronic structure calculations, have been studied using a combination of characterization tools. The films grown by pulsed laser deposition have high-quality microstructure and electrical properties. The atomic structure and band alignment at the ZrO 2/Si interfaces have been determined by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Relative stabilities and electronic properties of interface structure have been discussed and compared from the view of experimental and calculated results. © 2005 Elsevier B.V. All rights reserved.
Source Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/98921
ISSN: 09215107
DOI: 10.1016/j.mseb.2004.12.023
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