Please use this identifier to cite or link to this item:
|Title:||The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations|
Pulsed laser deposition
X-ray photoelectron spectroscopy
|Citation:||Wang, S.J., Dong, Y.F., Huan, C.H.A., Feng, Y.P., Ong, C.K. (2005-04-25). The epitaxial ZrO2 on silicon as alternative gate dielectric: Film growth, characterization and electronic structure calculations. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 118 (1-3) : 122-126. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2004.12.023|
|Abstract:||The epitaxial ZrO2 on silicon as alternative gate dielectric, including film growth, interface characterization and electronic structure calculations, have been studied using a combination of characterization tools. The films grown by pulsed laser deposition have high-quality microstructure and electrical properties. The atomic structure and band alignment at the ZrO 2/Si interfaces have been determined by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Relative stabilities and electronic properties of interface structure have been discussed and compared from the view of experimental and calculated results. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 20, 2018
WEB OF SCIENCETM
checked on Sep 10, 2018
checked on Sep 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.