Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/98882
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dc.titleSize-dependent melting temperature and thermal conductivity of nanoscale semiconductors
dc.contributor.authorLiang, L.H.
dc.contributor.authorLi, B.
dc.date.accessioned2014-10-16T09:52:34Z
dc.date.available2014-10-16T09:52:34Z
dc.date.issued2007-09-30
dc.identifier.citationLiang, L.H.,Li, B. (2007-09-30). Size-dependent melting temperature and thermal conductivity of nanoscale semiconductors. International Journal of Modern Physics B 21 (23-24) : 4026-4029. ScholarBank@NUS Repository.
dc.identifier.issn02179792
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/98882
dc.description.abstractA model describing size-dependent melting temperature and thermal conductivity of nanosemiconductors is proposed based on Lindermann's melting criterion and Debye model. By the atomic thermal vibration consideration and by introducing intrinsic size effect of phonon velocity and mean free path combined with surface scattering effect, the model predicts that the melting temperature and thermal conductivity of nanosemiconductors decrease as the size reduces. The size effect depends on such material parameters as the vibration entropy, mean free path, the characteristic crystal size and surface roughness. The predictions are in agreement with experimental results of Si nanoparticles, nanowires and thin films. © World Scientific Publishing Company.
dc.sourceScopus
dc.subjectMelting temperature
dc.subjectNanosemiconductors
dc.subjectSize effect
dc.subjectThermal conductivity
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.description.sourcetitleInternational Journal of Modern Physics B
dc.description.volume21
dc.description.issue23-24
dc.description.page4026-4029
dc.description.codenIJPBE
dc.identifier.isiutNOT_IN_WOS
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