Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10854-007-9497-9
Title: Silicon photonic waveguides for mid- And long-wave infrared region
Authors: Yang, P.Y.
Stankovic, S.
Crnjanski, J.
Teo, E.J. 
Thomson, D.
Bettiol, A.A. 
Breese, M.B.H. 
Headley, W.
Giusca, C.
Reed, G.T.
Mashanovich, G.Z.
Issue Date: Jan-2009
Citation: Yang, P.Y., Stankovic, S., Crnjanski, J., Teo, E.J., Thomson, D., Bettiol, A.A., Breese, M.B.H., Headley, W., Giusca, C., Reed, G.T., Mashanovich, G.Z. (2009-01). Silicon photonic waveguides for mid- And long-wave infrared region. Journal of Materials Science: Materials in Electronics 20 (SUPPL. 1) : S159-S163. ScholarBank@NUS Repository. https://doi.org/10.1007/s10854-007-9497-9
Abstract: Silicon photonics is experiencing a dramatic increase in interest due to emerging application areas and several high profile successes in device and technology development (Liu et al Nature 427:615, 2004; Rong et al Nature 433:725, 2005; Almeida et al Nature 431:1081, 2004). Conventional waveguides in silicon photonics are designed for the telecom wavelengths. However, mid- and long-wave infrared regions are interesting for several application areas including sensing, communications, signal processing, missile detection and imaging (Soref et al J Opt A Pure Appl Opt 8:840, 2006). The most popular waveguide platform in silicon photonics is the Silicon-OnInsulator (SOI) structure, in the form of either a strip or a rib waveguide. This material structure, however, is not suitable for longer wavelengths (except in the 2.9-3.6 μm range) due to the absorption spectra of silicon dioxide (Soref et al J Opt A Pure Appl Opt 8:840, 2006). In this paper, we discuss the design and fabrication of two different waveguide structures, the freestanding (Yang et al Appl Phys Lett 90:241109, 2007) and hollow core waveguides (Stanković et al Proceedings of 51th Conference ETRAN, 2007). The former is suitable for long-wave infrared applications as it has an air cladding, whilst the latter is a candidate for sensing in the mid-wave infrared wavelength region.
Source Title: Journal of Materials Science: Materials in Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/98874
ISSN: 09574522
DOI: 10.1007/s10854-007-9497-9
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