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|Title:||Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN|
|Source:||Wang, L.,Hu, Y.,Li, Z.,Tang, J.-C.,Wang, X.-S. (2002-12). Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN. Nanotechnology 13 (6) : 714-719. ScholarBank@NUS Repository. https://doi.org/6/303|
|Abstract:||The nucleation and growth of Si and Ge clusters/crystallites on SiNx films, which act as relative inert substrates, proceed in a quite complicated manner compared with conventional epitaxial processes. We examine the size dependence of the shape, surface structures and orientation of nano-scale clusters/crystallites. Facets are not observed until the crystallite diameter reaches ∼40 nm. Due to the isotropic surface energy and a weak interaction with the substrate, the orientation of the clusters/crystallites is random initially. A preferred orientation, however, emerges on crystalline SiNx films as the crystallite size increases. The growth nature of nano-particles, their interactions with the substrates and among themselves determine the overlayer texture as the amount of material deposition increases.|
|Appears in Collections:||Staff Publications|
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