Please use this identifier to cite or link to this item:
Title: Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN
Authors: Wang, L.
Hu, Y.
Li, Z.
Tang, J.-C.
Wang, X.-S. 
Issue Date: Dec-2002
Citation: Wang, L., Hu, Y., Li, Z., Tang, J.-C., Wang, X.-S. (2002-12). Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN. Nanotechnology 13 (6) : 714-719. ScholarBank@NUS Repository.
Abstract: The nucleation and growth of Si and Ge clusters/crystallites on SiNx films, which act as relative inert substrates, proceed in a quite complicated manner compared with conventional epitaxial processes. We examine the size dependence of the shape, surface structures and orientation of nano-scale clusters/crystallites. Facets are not observed until the crystallite diameter reaches ∼40 nm. Due to the isotropic surface energy and a weak interaction with the substrate, the orientation of the clusters/crystallites is random initially. A preferred orientation, however, emerges on crystalline SiNx films as the crystallite size increases. The growth nature of nano-particles, their interactions with the substrates and among themselves determine the overlayer texture as the amount of material deposition increases.
Source Title: Nanotechnology
ISSN: 09574484
DOI: 10.1088/0957-4484/13/6/303
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Mar 20, 2019


checked on Mar 20, 2019

Page view(s)

checked on Mar 23, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.