Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/13/6/303
Title: Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN
Authors: Wang, L.
Hu, Y.
Li, Z.
Tang, J.-C.
Wang, X.-S. 
Issue Date: Dec-2002
Citation: Wang, L., Hu, Y., Li, Z., Tang, J.-C., Wang, X.-S. (2002-12). Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN. Nanotechnology 13 (6) : 714-719. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/13/6/303
Abstract: The nucleation and growth of Si and Ge clusters/crystallites on SiNx films, which act as relative inert substrates, proceed in a quite complicated manner compared with conventional epitaxial processes. We examine the size dependence of the shape, surface structures and orientation of nano-scale clusters/crystallites. Facets are not observed until the crystallite diameter reaches ∼40 nm. Due to the isotropic surface energy and a weak interaction with the substrate, the orientation of the clusters/crystallites is random initially. A preferred orientation, however, emerges on crystalline SiNx films as the crystallite size increases. The growth nature of nano-particles, their interactions with the substrates and among themselves determine the overlayer texture as the amount of material deposition increases.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/98873
ISSN: 09574484
DOI: 10.1088/0957-4484/13/6/303
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