Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00022-7
Title: Raman scattering study of a GaAsN epitaxial layer
Authors: Yu, G.Y. 
Shen, Z.X. 
Liu, L. 
Sun, W.X. 
Keywords: GaAsN
Phonon correlation length
Raman scattering
Issue Date: Dec-2001
Source: Yu, G.Y., Shen, Z.X., Liu, L., Sun, W.X. (2001-12). Raman scattering study of a GaAsN epitaxial layer. Materials Science in Semiconductor Processing 4 (6) : 581-584. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00022-7
Abstract: Raman scattering study of a dilute GaAsN epitaxy layer was carried out at variable temperature and pressure. The localization due to the presence of the N atoms is responsible for the small correlation length in the GaAsN alloy, which is also evident from the broadening and asymmetry of the LO mode of the GaAs-like Raman band. The temperature dependence of the correlation length was analyzed. Nitrogen-induced localization also has a strong influence on the pressure dependence of the Born's effective dynamic charge e*. © 2002 Elsevier Science Ltd. All rights reserved.
Source Title: Materials Science in Semiconductor Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/98864
ISSN: 13698001
DOI: 10.1016/S1369-8001(02)00022-7
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