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|Title:||Properties of VAs/GaAs interface from first principles study|
|Authors:||Wu, R.Q. |
|Source:||Wu, R.Q., Peng, G.W., Liu, L., Feng, Y.P. (2006-01-01). Properties of VAs/GaAs interface from first principles study. Journal of Physics: Conference Series 29 (1) : 150-154. ScholarBank@NUS Repository. https://doi.org/10.1088/1742-6596/29/1/028|
|Abstract:||Density functional theory calculations with local spin density approximation (LSDA) have been performed to study the properties of VAs/GaAs interface. It was found that the half-metallicity of Cr layers close to the interface remains unchanged for an abrupt interface. The valence band minimum (VBM) of the minority spin lies well below the Fermi level of the majority spin (1.0 eV). The Schottky barrier height (SBH) to GaAs (n-type) is calculated to be 1.09 eV, which is acceptable regarding the band gap of GaAs. The conservation of halfmetallicity at the interface indicates that such a heterostructure is a promising candidate for high efficiency spin current injection at high temperature. © 2006 IOP Publishing Ltd.|
|Source Title:||Journal of Physics: Conference Series|
|Appears in Collections:||Staff Publications|
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