Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2005.04.099
Title: New developments in the applications of proton beam writing
Authors: Mistry, P.
Gomez-Morilla, I.
Grime, G.W.
Webb, R.P.
Gwilliam, R.
Cansell, A.
Merchant, M.
Kirkby, K.J.
Teo, E.J. 
Breese, M.B.H. 
Bettiol, A.A. 
Blackwood, D.J. 
Watt, F. 
Keywords: Electrochemical etching
GaAs
Proton beam writing
Silicon
Issue Date: Aug-2005
Source: Mistry, P., Gomez-Morilla, I., Grime, G.W., Webb, R.P., Gwilliam, R., Cansell, A., Merchant, M., Kirkby, K.J., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J., Watt, F. (2005-08). New developments in the applications of proton beam writing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 237 (1-2) : 188-192. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.04.099
Abstract: This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below. © 2005 Elsevier B.V. All rights reserved.
Source Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
URI: http://scholarbank.nus.edu.sg/handle/10635/98807
ISSN: 0168583X
DOI: 10.1016/j.nimb.2005.04.099
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