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|Title:||New developments in the applications of proton beam writing|
Proton beam writing
|Citation:||Mistry, P., Gomez-Morilla, I., Grime, G.W., Webb, R.P., Gwilliam, R., Cansell, A., Merchant, M., Kirkby, K.J., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J., Watt, F. (2005-08). New developments in the applications of proton beam writing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 237 (1-2) : 188-192. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.04.099|
|Abstract:||This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Appears in Collections:||Staff Publications|
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