Please use this identifier to cite or link to this item:
|Title:||New developments in the applications of proton beam writing|
Proton beam writing
|Citation:||Mistry, P., Gomez-Morilla, I., Grime, G.W., Webb, R.P., Gwilliam, R., Cansell, A., Merchant, M., Kirkby, K.J., Teo, E.J., Breese, M.B.H., Bettiol, A.A., Blackwood, D.J., Watt, F. (2005-08). New developments in the applications of proton beam writing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 237 (1-2) : 188-192. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.04.099|
|Abstract:||This report describes how proton beam writing can be used to produce direct write, high resolution three dimensional structures on the nano and micron scales in semiconductor materials such as p-type (1 0 0) bulk silicon and gallium arsenide. The lattice damage caused by the proton irradiation increases the electrical resistance of the semiconductors resulting in a raised structure of the scanned area after an electrochemical etch. Advances in this field over the past few years and its relevance to future technology mean that it is now a powerful contender for direct write technology for future nodes 45 nm and below. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 13, 2018
WEB OF SCIENCETM
checked on Jun 12, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.