Please use this identifier to cite or link to this item:
Title: Investigation of titanium silicide formation using secondary ion mass spectrometry
Authors: Wee, Andrew T.S. 
Huan, Alfred C.H. 
Thian, W.H.
Tan, K.L. 
Hogan, Royston
Issue Date: 1994
Source: Wee, Andrew T.S.,Huan, Alfred C.H.,Thian, W.H.,Tan, K.L.,Hogan, Royston (1994). Investigation of titanium silicide formation using secondary ion mass spectrometry. Materials Research Society Symposium - Proceedings 342 : 117-122. ScholarBank@NUS Repository.
Abstract: Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer.
Source Title: Materials Research Society Symposium - Proceedings
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Mar 9, 2018

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.