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https://scholarbank.nus.edu.sg/handle/10635/98769
Title: | Investigation of titanium silicide formation using secondary ion mass spectrometry | Authors: | Wee, Andrew T.S. Huan, Alfred C.H. Thian, W.H. Tan, K.L. Hogan, Royston |
Issue Date: | 1994 | Citation: | Wee, Andrew T.S.,Huan, Alfred C.H.,Thian, W.H.,Tan, K.L.,Hogan, Royston (1994). Investigation of titanium silicide formation using secondary ion mass spectrometry. Materials Research Society Symposium - Proceedings 342 : 117-122. ScholarBank@NUS Repository. | Abstract: | Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer. | Source Title: | Materials Research Society Symposium - Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/98769 | ISSN: | 02729172 |
Appears in Collections: | Staff Publications |
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