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|Title:||Investigation of titanium silicide formation using secondary ion mass spectrometry|
|Authors:||Wee, Andrew T.S. |
Huan, Alfred C.H.
|Citation:||Wee, Andrew T.S.,Huan, Alfred C.H.,Thian, W.H.,Tan, K.L.,Hogan, Royston (1994). Investigation of titanium silicide formation using secondary ion mass spectrometry. Materials Research Society Symposium - Proceedings 342 : 117-122. ScholarBank@NUS Repository.|
|Abstract:||Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the so-called 'snowplough' effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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