Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0010-4655(01)00365-4
Title: Intradonor 1s-2p+ absorption line shapes of doped GaAs/Al0.3Ga0.7As superlattices
Authors: Jiang, P.
Kok, W.C. 
Keywords: Doped superlattices
Inhomogeneous broadening
Issue Date: 15-Dec-2001
Citation: Jiang, P., Kok, W.C. (2001-12-15). Intradonor 1s-2p+ absorption line shapes of doped GaAs/Al0.3Ga0.7As superlattices. Computer Physics Communications 142 (1-3) : 300-304. ScholarBank@NUS Repository. https://doi.org/10.1016/S0010-4655(01)00365-4
Abstract: The 1s-2p+ intradonor absorption spectra associated with shallow donor impurities in GaAs/Al 0.3Ga0.7As superlattices are calculated for x-polarized radiation in the presence of a magnetic field. These yield peak positions which are in good agreement with experiment. Calculations of the 1 s-2p+ absorption line shapes for doped superlattices with different periodicities indicate that the absorption line shape broadens with increasing well width. This is confirmed by experiment, suggesting that the derivative of the transition frequency with donor position around the well center plays an important part in the inhomogeneous broadening of these spectral lines. © 2001 Elsevier Science B.V. All rights reserved.
Source Title: Computer Physics Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/98765
ISSN: 00104655
DOI: 10.1016/S0010-4655(01)00365-4
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