Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98760
Title: In-line plasma induced charging monitor for 0.15μm polysilicon gate etching
Authors: Chong, D.
Won Jong Yoo
Ting Cheong Ang
Sang Yee Loong
Cha, R.
Pin Hian Lee
Layadi, N.
Chan, L.
See, A. 
Issue Date: 2001
Citation: Chong, D.,Won Jong Yoo,Ting Cheong Ang,Sang Yee Loong,Cha, R.,Pin Hian Lee,Layadi, N.,Chan, L.,See, A. (2001). In-line plasma induced charging monitor for 0.15μm polysilicon gate etching. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 52-55. ScholarBank@NUS Repository.
Abstract: Plasma induced charging damage from polysilicon gate etch was studied using both end-of-line polysilicon antenna test structures and in-line Surface Potential Measurement (SPM) technique. This study is performed on 0.15μm gate patterning process using two different polysilicon etch chambers. In our study, the standard deviation and range of surface potentials obtained from the SPM technique show the same trend with those of threshold voltages obtained from polysilicon antenna test structures. The SPM technique could be used as an add-on method to antenna test structures in the monitor of plasma induced charging damage.
Source Title: International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/98760
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