In-line plasma induced charging monitor for 0.15μm polysilicon gate etching

Abstract

Plasma induced charging damage from polysilicon gate etch was studied using both end-of-line polysilicon antenna test structures and in-line Surface Potential Measurement (SPM) technique. This study is performed on 0.15μm gate patterning process using two different polysilicon etch chambers. In our study, the standard deviation and range of surface potentials obtained from the SPM technique show the same trend with those of threshold voltages obtained from polysilicon antenna test structures. The SPM technique could be used as an add-on method to antenna test structures in the monitor of plasma induced charging damage.