Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mseb.2004.07.025
Title: Formation of ultra-shallow p +/n junctions in silicon-on-insulator (SOI) substrate using laser annealing
Authors: Ong, K.K.
Pey, K.L.
Lee, P.S.
Wee, A.T.S. 
Chong, Y.F.
Yeo, K.L.
Wang, X.C.
Keywords: Boron
Laser annealing
Silicon-on-insulator
Issue Date: 2004
Citation: Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Chong, Y.F., Yeo, K.L., Wang, X.C. (2004). Formation of ultra-shallow p +/n junctions in silicon-on-insulator (SOI) substrate using laser annealing. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 114-115 (SPEC. ISS.) : 25-28. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mseb.2004.07.025
Abstract: Laser annealing (LA), in which the laser melts the surface layer of silicon and causes the dopants to be distributed uniformly within the melted region, produces abrupt, highly activated and ultrashallow junctions. The degree of melting is determined by the extent of laser absorption and rate of heat dissipation, which are dependent on the substrate properties. When applying LA on substrates such as silicon-on-insulator (SOI), the heating and cooling characteristics are expected to be different from that of a typical Si substrate. This work compares the redistribution of boron atoms in silicon (100) and SOI substrates after laser annealing. SIMS analysis shows that laser induced melting is significantly deeper for the SOI than the silicon substrates using the same laser fluence. The enhancement of melting is attributed to the heat insulating effect of the buried oxide (BOX) layer. With multiple-pulse LA, the junction depth in the SOI substrate increases with subsequent laser pulses, a feature that is absent in silicon substrate. In the SOI substrate, the sheet resistance remains relatively constant regardless of deeper junction formed with multiple pulse conditions, implying the maximum dopant activation at a given laser fluence is reached. Boron profiles annealed in the non-melt regime with 20 laser pulses or less overlap with the as-implanted profiles, suggesting that no melting has occurred. However, significant melting is observed at 50-pulse annealing. The corresponding sheet resistance shows a sharp decrease with the initial pulses and consequently decreases slightly with increasing pulses. © 2004 Elsevier B.V. All rights reserved.
Source Title: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/98724
ISSN: 09215107
DOI: 10.1016/j.mseb.2004.07.025
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

17
checked on Jul 13, 2018

WEB OF SCIENCETM
Citations

15
checked on Jun 11, 2018

Page view(s)

57
checked on Jul 6, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.