Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4795542
Title: Field-effect control of tunneling barrier height by exploiting graphene's low density of states
Authors: Ponomarenko, L.A.
Belle, B.D.
Jalil, R.
Britnell, L.
Gorbachev, R.V.
Geim, A.K.
Novoselov, K.S.
Castro Neto, A.H. 
Eaves, L.
Katsnelson, M.I.
Issue Date: 7-Apr-2013
Citation: Ponomarenko, L.A., Belle, B.D., Jalil, R., Britnell, L., Gorbachev, R.V., Geim, A.K., Novoselov, K.S., Castro Neto, A.H., Eaves, L., Katsnelson, M.I. (2013-04-07). Field-effect control of tunneling barrier height by exploiting graphene's low density of states. Journal of Applied Physics 113 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4795542
Abstract: We exploit the low density of electronic states of graphene to modulate the tunnel current flowing perpendicular to the atomic layers of a multi-layer graphene-boron nitride device. This is achieved by using the electric field effect to raise the Fermi energy of the graphene emitter layer and thereby reduce the effective barrier height for tunneling electrons. We discuss how the electron charge density in the graphene layers and the properties of the boron nitride tunnel barrier determine the device characteristics under operating conditions and derive expressions for carrier tunneling in these highly anisotropic layered heterostructures. © 2013 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/98718
ISSN: 00218979
DOI: 10.1063/1.4795542
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