Please use this identifier to cite or link to this item: https://doi.org/10.1557/opl.2013.423
Title: Fabrication of silicon nanowires by ion beam irradiation
Authors: Song, J.
Dang, Z.Y.
Azimi, S.
Breese, M.B.H. 
Issue Date: 2012
Source: Song, J.,Dang, Z.Y.,Azimi, S.,Breese, M.B.H. (2012). Fabrication of silicon nanowires by ion beam irradiation. Materials Research Society Symposium Proceedings 1512 : 26-32. ScholarBank@NUS Repository. https://doi.org/10.1557/opl.2013.423
Abstract: Silicon nanowires are becoming more important because of increasing requirements of the small scale and dense integration of devices. We report a top-down fabrication method for silicon nanowires using high-energy ion beam irradiation of bulk p-type silicon followed by electrochemical etching. Silicon nanowires with a diameter of ∼50nm have been fabricated and densely patterned nanowire arrays fabricated in different resistivity silicon wafers. With a suitable support structure, free standing silicon nanowires are also achieved. We investigate results depending on silicon wafer resistivity and location within the irradiated area. © 2013 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/98712
ISBN: 9781632661050
ISSN: 02729172
DOI: 10.1557/opl.2013.423
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