Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.524314
Title: Fabrication of silicon microstructures using a high energy ion beam
Authors: Teo, E.J. 
Liu, M.H. 
Breese, M.B.H. 
Tavernier, E.P.
Bettiol, A.A. 
Blackwood, D.J. 
Watt, F. 
Keywords: Electrochemical etching
Ion accelerator
Porous silicon
Proton beam writing
Silicon micromachining
Issue Date: 2004
Citation: Teo, E.J., Liu, M.H., Breese, M.B.H., Tavernier, E.P., Bettiol, A.A., Blackwood, D.J., Watt, F. (2004). Fabrication of silicon microstructures using a high energy ion beam. Proceedings of SPIE - The International Society for Optical Engineering 5347 : 264-270. ScholarBank@NUS Repository. https://doi.org/10.1117/12.524314
Abstract: We report an alternative technique which utilizes fast proton or helium ion irradiation prior to electrochemical etching for three-dimensional micro-fabrication in bulk p-type silicon. The ion-induced damage increases the resistivity of the irradiated regions and slows down porous silicon formation. A raised structure of the scanned area is left behind after removal of the un-irradiated regions with potassium hydroxide. The thickness of the removed material depends on the irradiated dose at each region so that multiple level structures can be produced with a single irradiation step. By exposing the silicon to different ion energies, the implanted depth and hence structure height can be precisely varied. We demonstrate the versatility of this three-dimensional patterning process to create multilevel cross structure and free-standing bridges in bulk silicon, as well as sub-micron pillars and high aspect-ratio nano-tips.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/98711
ISSN: 0277786X
DOI: 10.1117/12.524314
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