Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2011.02.027
Title: Exposure parameters in proton beam writing for KMPR and EPO Core negative tone photoresists
Authors: Ynsa, M.D.
Shao, P. 
Kulkarni, S.R. 
Liu, N.N. 
Van Kan, J.A. 
Issue Date: 15-Oct-2011
Citation: Ynsa, M.D., Shao, P., Kulkarni, S.R., Liu, N.N., Van Kan, J.A. (2011-10-15). Exposure parameters in proton beam writing for KMPR and EPO Core negative tone photoresists. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 269 (20) : 2409-2412. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2011.02.027
Abstract: In spite of its recent establishment, proton beam writing (PBW) has already demonstrated to be a highly competitive lithographic technique. PBW is a fast direct-write technique capable of producing high-aspect-ratio micro- and nano-structures in resist material. Typical applications can be found in nanoimprinting, biomedical research, photonics, and optics, among other fields. The progress of PBW is linked to the successful introduction of new resist materials. In this paper, KMPR and EPO Core, negative tone photoresists are tested on their compatibility with PBW. KMPR resist has similar chemical and process properties compared to SU-8. Employing UV lithography on KMPR resist, details of 30 μm have been obtained in Ni, indicating a possible advantage compared to SU-8 for optical lithography [1]. In this study, the sensitivity to MeV proton exposure and sub-micron feature sizes are presented in KMPR. PBW has been also combined with Ni electroplating in order to determine the suitability of KMPR and EPO Core resist to fabricate 3D metallic moulds and stamps.
Source Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
URI: http://scholarbank.nus.edu.sg/handle/10635/98701
ISSN: 0168583X
DOI: 10.1016/j.nimb.2011.02.027
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