Please use this identifier to cite or link to this item:
|Title:||Enhancement of minority-carrier lifetime by an advanced high temperature annealing method|
|Authors:||Pan, H. |
Lifetime of minority-carrier
|Citation:||Pan, H., Tong, L., Feng, Y., Lin, J. (2006-05-10). Enhancement of minority-carrier lifetime by an advanced high temperature annealing method. Thin Solid Films 504 (1-2) : 129-131. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.156|
|Abstract:||An advanced annealing method was proposed to enhance the lifetime of minority carriers by obtaining larger defect-free zone and keeping an amount of oxygen precipitates. We investigated the influence of annealing process on the defect-free zone and oxygen precipitates. In our experiments, the thickness of defect-free zone reached up to 100 μm. And an amount of oxygen precipitates, which play a great role on impurity gathering, were kept at the same time. It was found that the lifetime of minority-carrier was proportional to the thickness of defect-free zone. The lifetime of minority carriers was enhanced by reducing the grown-in defects in the defect-free zone. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 25, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.