Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.156
Title: Enhancement of minority-carrier lifetime by an advanced high temperature annealing method
Authors: Pan, H. 
Tong, L.
Feng, Y. 
Lin, J. 
Keywords: Advanced annealing
Defect-free zone
Lifetime of minority-carrier
Oxygen precipitates
Issue Date: 10-May-2006
Citation: Pan, H., Tong, L., Feng, Y., Lin, J. (2006-05-10). Enhancement of minority-carrier lifetime by an advanced high temperature annealing method. Thin Solid Films 504 (1-2) : 129-131. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.156
Abstract: An advanced annealing method was proposed to enhance the lifetime of minority carriers by obtaining larger defect-free zone and keeping an amount of oxygen precipitates. We investigated the influence of annealing process on the defect-free zone and oxygen precipitates. In our experiments, the thickness of defect-free zone reached up to 100 μm. And an amount of oxygen precipitates, which play a great role on impurity gathering, were kept at the same time. It was found that the lifetime of minority-carrier was proportional to the thickness of defect-free zone. The lifetime of minority carriers was enhanced by reducing the grown-in defects in the defect-free zone. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/98699
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.156
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