Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2209374
Title: Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealing
Authors: Ong, K.K.
Pey, K.L.
Lee, P.S.
Wee, A.T.S. 
Wang, X.C.
Wong, L.H.
Issue Date: 2006
Citation: Ong, K.K.,Pey, K.L.,Lee, P.S.,Wee, A.T.S.,Wang, X.C.,Wong, L.H. (2006). Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealing. ECS Transactions 1 (30) : 1-6. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2209374
Abstract: Strained-Si/SiGe substrate comprises a thermally less conductive SiGe layer, which deprives a good thermal dissipation pathway. This gives rise to a highly non-equilibrium laser process and can vary significantly to that in normal bulk silicon substrate. Our results show that the boron distribution in strained-Si/SiGe substrate is always deeper and more abrupt than that in bulk silicon substrate, signifying a substantial thermal confinement that leads to a greater melt extent and melting duration. It is found that a decrease of over 94% thermal transfer rate occurs in the strained-Si/SiGe substrate. Non-melt laser annealing, on the other hand, produces dopant profiles of negligible diffusion and improves activation in the strained-Si/SiGe substrates. No degradation in the strain in the strained-Si layer was induced after non-melt laser annealing. The study demonstrates that non-melt laser annealing in thermally less conductive semiconductor substrates is capable of enhancing dopant activation at low laser fluence. copyright The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/98698
ISSN: 19385862
DOI: 10.1149/1.2209374
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

23
checked on May 4, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.