Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S0026-2692(03)00238-6
DC Field | Value | |
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dc.title | Effect of parylene layer on the performance of OLED | |
dc.contributor.author | Ke, L. | |
dc.contributor.author | Kumar, R.S. | |
dc.contributor.author | Zhang, K. | |
dc.contributor.author | Chua, S.-J. | |
dc.contributor.author | Wee, A.T.S. | |
dc.date.accessioned | 2014-10-16T09:50:09Z | |
dc.date.available | 2014-10-16T09:50:09Z | |
dc.date.issued | 2004-04 | |
dc.identifier.citation | Ke, L., Kumar, R.S., Zhang, K., Chua, S.-J., Wee, A.T.S. (2004-04). Effect of parylene layer on the performance of OLED. Microelectronics Journal 35 (4) : 325-328. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(03)00238-6 | |
dc.identifier.issn | 00262692 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98682 | |
dc.description.abstract | An organic light-emitting device structure with a thin parylene layer deposited by low-temperature chemical vapour deposition at the anode-organic interface was fabricated. Such a structure gives higher luminescence efficiency when operated at the same current density compared to one without the parylene layer. In addition, the devices with a thin parylene layer also show a smaller number and smaller size dark non-emissive areas, slower growth rate of the dark areas and a longer device lifetime. The modified surface of the indium tin oxide (ITO) shows an increased work function compared to that of the ITO surface alone and a reduced surface roughness, which contributes to the device performance improvement. The parylene layer is a conformal coating on the ITO surface, which could significantly stabilise the interface leading to a more uniform current density. It also provides a good barrier for blocking oxygen and moisture diffusion and hence reducing dark spot occurrence. © 2003 Published by Elsevier Ltd. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0026-2692(03)00238-6 | |
dc.source | Scopus | |
dc.subject | Hole transporting layer | |
dc.subject | Indium tin oxide | |
dc.subject | Parylene layer | |
dc.type | Conference Paper | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1016/S0026-2692(03)00238-6 | |
dc.description.sourcetitle | Microelectronics Journal | |
dc.description.volume | 35 | |
dc.description.issue | 4 | |
dc.description.page | 325-328 | |
dc.description.coden | MICEB | |
dc.identifier.isiut | 000220391200003 | |
Appears in Collections: | Staff Publications |
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