Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.nimb.2005.01.099
Title: Characterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy
Authors: Huang, L.
Breese, M.B.H. 
Teo, E.J. 
Keywords: Misfit dislocation
Transmission ion channeling
Issue Date: Apr-2005
Source: Huang, L., Breese, M.B.H., Teo, E.J. (2005-04). Characterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 231 (1-4) : 452-456. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2005.01.099
Abstract: This paper uses the transmission ion channeling technique on the NUS Singletron accelerator to map misfit dislocations at the interface of a SiGe layer epitaxially grown on a (0 0 1) silicon substrate. A bunch of five 60° dislocations and a single dislocation have been studied using a focused 2 MeV proton beam with a spatial resolution of 60 nm and good image statistics. The bent (1 1 0) planes due to 60° dislocations cause the image contrast to change asymmetrically while tilting the sample close to the channeling direction. © 2005 Elsevier B.V. All rights reserved.
Source Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
URI: http://scholarbank.nus.edu.sg/handle/10635/98649
ISSN: 0168583X
DOI: 10.1016/j.nimb.2005.01.099
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