Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2930687
Title: Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate
Authors: Tan, D.X.M.
Pey, K.L.
Ong, K.K.
Colombeau, B.
Ng, C.M.
Yeong, S.H.
Wee, A.T.S. 
Liu, C.J. 
Wang, X.C.
Issue Date: 2008
Citation: Tan, D.X.M., Pey, K.L., Ong, K.K., Colombeau, B., Ng, C.M., Yeong, S.H., Wee, A.T.S., Liu, C.J., Wang, X.C. (2008). Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate. Applied Physics Letters 92 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2930687
Abstract: In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98543
ISSN: 00036951
DOI: 10.1063/1.2930687
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