Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2008.05.030
Title: Ultralow-energy SIMS for shallow semiconductor depth profiling
Authors: Chanbasha, A.R.
Wee, A.T.S. 
Keywords: Cesium
Depth profiling
Oxygen
Silicon
SIMS
Ultralow-energy
Issue Date: 15-Dec-2008
Source: Chanbasha, A.R., Wee, A.T.S. (2008-12-15). Ultralow-energy SIMS for shallow semiconductor depth profiling. Applied Surface Science 255 (4) : 1307-1310. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2008.05.030
Abstract: We present a comprehensive secondary ion mass spectrometry (SIMS) study performed at ultralow energies using both oxygen and cesium primary ions, in positive and negative SIMS for silicon depth profiling, respectively. Variations in surface transient widths and depth resolution are reported as a function of primary ion energy (250 eV-1 keV) over a wide range of incidence angles (0-70°). The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta-layers of Si0.7Ge0.3. Optimum profiling conditions are found that are useful for silicon ultrashallow profiling. © 2008 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/98505
ISSN: 01694332
DOI: 10.1016/j.apsusc.2008.05.030
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Mar 5, 2018

WEB OF SCIENCETM
Citations

3
checked on Mar 5, 2018

Page view(s)

16
checked on Feb 25, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.