Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl0725998
Title: Ultralow thermal conductivity of isotope-doped silicon nanowires
Authors: Yang, N. 
Zhang, G.
Li, B. 
Issue Date: Jan-2008
Citation: Yang, N., Zhang, G., Li, B. (2008-01). Ultralow thermal conductivity of isotope-doped silicon nanowires. Nano Letters 8 (1) : 276-280. ScholarBank@NUS Repository. https://doi.org/10.1021/nl0725998
Abstract: The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The thermal conductivity reaches the minimum, which is about 27% of that of pure 28Si NW, when doped with 50% isotope atoms. The thermal conductivity of isotopic-superlattice structured SiNWs depends clearly on the period of superlattice. At a critical period of 1.09 nm, the thermal conductivity is only 25% of the value of pure Si NW. An anomalous enhancement of thermal conductivity is observed when the superlattice period is smaller than this critical length. The ultralow thermal conductivity of superlattice structured SiNWs is explained with phonon spectrum theory. © 2008 American Chemical Society.
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98504
ISSN: 15306984
DOI: 10.1021/nl0725998
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