Please use this identifier to cite or link to this item: https://doi.org/10.1088/1464-4258/11/2/024004
Title: Two-photon-enhanced three-photon absorption in transition-metal-doped semiconductor quantum dots
Authors: Feng, X.B. 
Xing, G.C.
Ji, W. 
Keywords: Defect state
Three-photon absorption
Transition-metal-doped semiconductor quantum dots (d-QDs)
Two-photon absorption
Issue Date: 2009
Citation: Feng, X.B., Xing, G.C., Ji, W. (2009). Two-photon-enhanced three-photon absorption in transition-metal-doped semiconductor quantum dots. Journal of Optics A: Pure and Applied Optics 11 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1464-4258/11/2/024004
Abstract: We report the observation of two-photon-enhanced three-photon absorption (3PA) in transition-metal-doped semiconductor quantum dots (d-QDs) in the near-infrared spectral region. Due to the degeneracy between two-photon transitions to the states of metal ions inside the bandgap and three-photon transitions to the excitonic state, the 3PA cross-section is greatly enhanced in comparison with the predictions by the 3PA theory derived under the four-band approximation. Together with the enhancement in their photoluminescence, such an enhancement mechanism is highly desirable in the design and optimization of fluorescent d-QDs for potential applications based on three-photon-excited fluorescence. © 2009 IOP Publishing Ltd.
Source Title: Journal of Optics A: Pure and Applied Optics
URI: http://scholarbank.nus.edu.sg/handle/10635/98486
ISSN: 14644258
DOI: 10.1088/1464-4258/11/2/024004
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