Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.105.225901
Title: Topological nature of the phonon Hall effect
Authors: Zhang, L. 
Ren, J.
Wang, J.-S. 
Li, B. 
Issue Date: 24-Nov-2010
Citation: Zhang, L., Ren, J., Wang, J.-S., Li, B. (2010-11-24). Topological nature of the phonon Hall effect. Physical Review Letters 105 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.105.225901
Abstract: We provide a topological understanding of the phonon Hall effect in dielectrics with Raman spin-phonon coupling. A general expression for phonon Hall conductivity is obtained in terms of the Berry curvature of band structures. We find a nonmonotonic behavior of phonon Hall conductivity as a function of the magnetic field. Moreover, we observe a phase transition in the phonon Hall effect, which corresponds to the sudden change of band topology, characterized by the altering of integer Chern numbers. This can be explained by touching and splitting of phonon bands. © 2010 The American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98421
ISSN: 00319007
DOI: 10.1103/PhysRevLett.105.225901
Appears in Collections:Staff Publications

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