Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.110.186601
Title: Topological insulating states in laterally patterned ordinary semiconductors
Authors: Sushkov, O.P.
Castro Neto, A.H. 
Issue Date: 3-May-2013
Citation: Sushkov, O.P., Castro Neto, A.H. (2013-05-03). Topological insulating states in laterally patterned ordinary semiconductors. Physical Review Letters 110 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.110.186601
Abstract: We propose that ordinary semiconductors with large spin-orbit coupling, such as GaAs, can host stable, robust, and tunable topological states in the presence of quantum confinement and superimposed potentials with hexagonal symmetry. We show that the electronic gaps which support chiral spin edge states can be as large as the electronic bandwidth in the heterostructure miniband. The existing lithographic technology can produce a topological insulator operating at a temperature of 10-100 K. Improvement of lithographic techniques will open the way to a tunable room temperature topological insulator. © 2013 American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98419
ISSN: 00319007
DOI: 10.1103/PhysRevLett.110.186601
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