Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2903576
Title: Three-photon absorption saturation in ZnO and ZnS crystals
Authors: Gu, B. 
He, J. 
Ji, W. 
Wang, H.-T.
Issue Date: 2008
Source: Gu, B., He, J., Ji, W., Wang, H.-T. (2008). Three-photon absorption saturation in ZnO and ZnS crystals. Journal of Applied Physics 103 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2903576
Abstract: We reported the observation of the saturation of interband three-photon absorption (3PA) in wide-gap semiconductors under intense femtosecond laser excitation. Theoretically, we developed a 3PA saturation model that is in agreement with the Z-scan experimental results. The characteristic saturation intensities were determined to be 44 and 210 GW cm2 for ZnO and ZnS crystals, respectively. The 3PA saturation model is also consistent with the ultrafast dynamics of 3PA-generated charge carriers in ZnO and ZnS crystals, obtained from the femtosecond transient absorption measurements. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/98403
ISSN: 00218979
DOI: 10.1063/1.2903576
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