Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physleta.2011.12.040
Title: Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires
Authors: Shi, L.
Chen, J.
Zhang, G.
Li, B. 
Keywords: Thermoelectric figure of merit
ZnO nanowires
Issue Date: 6-Feb-2012
Citation: Shi, L., Chen, J., Zhang, G., Li, B. (2012-02-06). Thermoelectric figure of merit in Ga-doped [0001] ZnO nanowires. Physics Letters, Section A: General, Atomic and Solid State Physics 376 (8-9) : 978-981. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physleta.2011.12.040
Abstract: By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate the impact of gallium (Ga) doping on the thermoelectric property of [0001] zinc oxide nanowires (Zn 1-xGa xO NWs). Our results show that the thermoelectric performance of the Zn 1-xGa xO NWs is strongly dependent on the Ga contents. The maximum achievable room temperature thermoelectric figure of merit in Zn 1-xGa xO NW can be increased by a factor of 2.5 at Ga content of 0.04, compared with the ZT of pure ZnO NWs. This may open up ZnO NW arrays applications in possible thermoelectric energy generator and cooler. © 2011 Elsevier B.V. All rights reserved.
Source Title: Physics Letters, Section A: General, Atomic and Solid State Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/98386
ISSN: 03759601
DOI: 10.1016/j.physleta.2011.12.040
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