Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.050
Title: Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices
Authors: Wong, L.H.
Wong, C.C.
Ong, K.K.
Liu, J.P.
Chan, L.
Rao, R.
Pey, K.L.
Liu, L. 
Shen, Z.X. 
Keywords: Raman
Silicon germanium
Strained silicon
Thermal stability
Issue Date: Sep-2004
Citation: Wong, L.H., Wong, C.C., Ong, K.K., Liu, J.P., Chan, L., Rao, R., Pey, K.L., Liu, L., Shen, Z.X. (2004-09). Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices. Thin Solid Films 462-463 (SPEC. ISS.) : 76-79. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.050
Abstract: The thermal stability of strained Si/Si1-xGex epilayers with x=0.15 to 0.25 was investigated under various thermal annealing conditions. High Resolution (HR) X-ray Diffractometry (XRD) was used to determine the intrinsic strain of the heterostructure before any thermal treatment. The effect of thermal processing on strain relaxation and Ge diffusion was observed by Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Strain analysis by Raman reveals no sign of Si strain relaxation for temperatures up to 1000 °C for 5 min. However, Ge diffusion into strained Si was detected by both Raman and SIMS. © 2004 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/98370
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.050
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