Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3735/22/10/014
Title: Thermal control unit for microwave measurements of conductivity of a semiconducting material
Authors: Oh, K.H. 
Ong, C.K. 
Tan, B.T.G. 
Issue Date: Oct-1989
Source: Oh, K.H., Ong, C.K., Tan, B.T.G. (1989-10). Thermal control unit for microwave measurements of conductivity of a semiconducting material. Journal of Physics E: Scientific Instruments 22 (10) : 876-879. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3735/22/10/014
Abstract: A simple thermal control unit, together with a transmission microwave bridge have been constructed for the measurement of electrical conductivity at the X-band frequency of a silicon sample in the range 323 to 573 K. The temperature dependence of the conductivity and hence the band gap of Si were obtained. The technique may be used for other semiconducting materials.
Source Title: Journal of Physics E: Scientific Instruments
URI: http://scholarbank.nus.edu.sg/handle/10635/98353
ISSN: 00223735
DOI: 10.1088/0022-3735/22/10/014
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